IGOT60R070D1AUMA1 Infineon Technologies
Артикул
IGOT60R070D1AUMA1
Бренд
Infineon Technologies
Описание
GANFET N-CH 600V 31A 20DSO, N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-87
Цена
3 906 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IGOT60R070D1AUMA1.jpg
Other Names
IGOT60R070D1AUMA1DKR,IGOT60R070D1AUMA1TR,2156-IGOT60R070D1AUMA1-448,SP001505772,IGOT60R070D1AUMA1CT
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
-
Base Product Number
IGOT60
Mounting Type
Surface Mount
Standard Package
800
Series
CoolGaN™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
20-PowerSOIC (0.433", 11.00mm Width)
Supplier Device Package
PG-DSO-20-87
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
-10V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут