IGT60R190D1SATMA1 Infineon Technologies
Артикул
IGT60R190D1SATMA1
Бренд
Infineon Technologies
Описание
GANFET N-CH 600V 12.5A 8HSOF, N-Channel 600 V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
Цена
2 590 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IGT60R190D1SATMA1.jpg
Other Names
IGT60R190D1SATMA1DKR,2156-IGT60R190D1SATMA1-448,SP001701702,IGT60R190D1SATMA1CT,IGT60R190D1SATMA1TR
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
55.5W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 960µA
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
-
Base Product Number
IGT60R190
Mounting Type
Surface Mount
Standard Package
2,000
Series
CoolGaN™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerSFN
Supplier Device Package
PG-HSOF-8-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
-10V
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