IMBG120R045M1HXTMA1 Infineon Technologies
Артикул
IMBG120R045M1HXTMA1
Бренд
Infineon Technologies
Описание
SICFET N-CH 1.2KV 47A TO263, N-Channel 1200 V 47A (Tc) 227W (Tc) Surface Mount PG-TO263-7-12
Цена
3 286 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IMBG120R045M1HXTMA1.jpg
Supplier Device Package
PG-TO263-7-12
Power Dissipation (Max)
227W (Tc)
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Rds On (Max) @ Id, Vgs
63mOhm @ 16A, 18V
Vgs(th) (Max) @ Id
5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 18 V
Vgs (Max)
+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1527 pF @ 800 V
Base Product Number
IMBG120
Standard Package
1,000
Series
CoolSiC™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-8, D?Pak (7 Leads + Tab), TO-263CA
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP005349829,448-IMBG120R045M1HXTMA1CT,448-IMBG120R045M1HXTMA1DKR,448-IMBG120R045M1HXTMA1TR
FET Feature
Standard
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