IPD80R1K4P7ATMA1 Infineon Technologies
Артикул
IPD80R1K4P7ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 800V 4A TO252, N-Channel 800 V 4A (Tc) 32W (Tc) Surface Mount PG-TO252-2
Цена
215 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD80R1K4P7ATMA1.jpg
Other Names
INFINFIPD80R1K4P7ATMA1,IPD80R1K4P7ATMA1DKR,IPD80R1K4P7ATMA1TR,IPD80R1K4P7ATMA1CT,SP001422564,2156-IPD80R1K4P7ATMA1
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
32W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 500 V
FET Feature
Super Junction
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPD80R1
Mounting Type
Surface Mount
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-2
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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