IPA70R900P7SXKSA1 Infineon Technologies
Артикул
IPA70R900P7SXKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 700V 6A TO220, N-Channel 700 V 6A (Tc) 20.5W (Tc) Through Hole PG-TO220-FP
Цена
188 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPA70R900P7SXKSA1.jpg
Other Names
IPA70R900P7S,IFEINFIPA70R900P7SXKSA1,SP001600942,2156-IPA70R900P7SXKSA1
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
20.5W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
900mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds
211 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPA70R900
Mounting Type
Through Hole
Series
CoolMOS™ P7
Package
Tube
Part Status
Active
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
PG-TO220-FP
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±16V
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