IPB009N03LGATMA1 Infineon Technologies
Артикул
IPB009N03LGATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 180A TO263-7, N-Channel 30 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
Цена
687 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB009N03LGATMA1.jpg
Other Names
IPB009N03LGATMA1TR,SP000394657,IPB009N03L GDKR-ND,IPB009N03LGATMA1CT,IPB009N03L GTR,IPB009N03L GCT-ND,IPB009N03L G-ND,IPB009N03L GTR-ND,IPB009N03L G,IPB009N03LG,IPB009N03L GCT,IPB009N03L GDKR,IPB009N03LGATMA1DKR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
250W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Rds On (Max) @ Id, Vgs
0.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
25000 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IPB009
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-7, D?Pak (6 Leads + Tab)
Supplier Device Package
PG-TO263-7-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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