IPB033N10N5LFATMA1 Infineon Technologies
Артикул
IPB033N10N5LFATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 120A TO263-3, N-Channel 100 V 120A (Tc) 179W (Tc) Surface Mount PG-TO263-3
Цена
1 180 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB033N10N5LFATMA1.jpg
Other Names
IPB033N10N5LFATMA1-ND,SP001503858,2156-IPB033N10N5LFATMA1,IPB033N10N5LFATMA1CT,INFINFIPB033N10N5LFATMA1,IPB033N10N5LFATMA1DKR,IPB033N10N5LFATMA1TR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
179W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPB033
Mounting Type
Surface Mount
Series
OptiMOS™-5
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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