IPB09N03LA Infineon Technologies
Артикул
IPB09N03LA
Бренд
Infineon Technologies
Описание
MOSFET N-CH 25V 50A TO263-3, N-Channel 25 V 50A (Tc) 63W (Tc) Surface Mount PG-TO263-3-2
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB09N03LA.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
63W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
8.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1642 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
IPB09N03LAINCT,IPB09N03LAINTR
Mounting Type
Surface Mount
Standard Package
1,000
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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