IPB110P06LMATMA1 Infineon Technologies
Артикул
IPB110P06LMATMA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 100A TO263-3, P-Channel 60 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Цена
889 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB110P06LMATMA1.jpg
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs
281 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8500 pF @ 30 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPB110P06LMATMA1TR,SP004987252,448-IPB110P06LMATMA1CT,IPB110P06LMATMA1-ND,448-IPB110P06LMATMA1DKR
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPB110
Power Dissipation (Max)
300W (Tc)
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