IPB12CN10N G Infineon Technologies
Артикул
IPB12CN10N G
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 67A D2PAK, N-Channel 100 V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB12CN10N-G.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
67A (Tc)
Rds On (Max) @ Id, Vgs
12.6mOhm @ 67A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4320 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
IPB12CN10N G-ND,IPB12CN10NG,SP000096450
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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