IPB60R120C7ATMA1 Infineon Technologies
Артикул
IPB60R120C7ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 19A TO263-3, N-Channel 650 V 19A (Tc) 92W (Tc) Surface Mount PG-TO263-3-2
Цена
942 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB60R120C7ATMA1.jpg
Other Names
IPB60R120C7ATMA1TR,IPB60R120C7ATMA1DKR,SP001385048,INFINFIPB60R120C7ATMA1,IPB60R120C7ATMA1CT,IPB60R120C7ATMA1-ND,2156-IPB60R120C7ATMA1
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
92W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Rds On (Max) @ Id, Vgs
120mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPB60R120
Mounting Type
Surface Mount
Series
CoolMOS™ C7
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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