IPB60R380C6ATMA1 Infineon Technologies
Артикул
IPB60R380C6ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 10.6A D2PAK, N-Channel 600 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO263-3
Цена
424 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB60R380C6ATMA1.jpg
Other Names
IPB60R380C6DKR-ND,IPB60R380C6ATMA1TR,IPB60R380C6CT,IPB60R380C6CT-ND,IPB60R380C6,IPB60R380C6TR-ND,IPB60R380C6ATMA1DKR,IPB60R380C6-ND,2156-IPB60R380C6ATMA1,IPB60R380C6ATMA1CT,ROCINFIPB60R380C6ATMA1,SP000660634,IPB60R380C6DKR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
83W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10.6A (Tc)
Rds On (Max) @ Id, Vgs
380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPB60R380
Mounting Type
Surface Mount
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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