IPD048N06L3GBTMA1 Infineon Technologies
Артикул
IPD048N06L3GBTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 90A TO252-3, N-Channel 60 V 90A (Tc) 115W (Tc) Surface Mount PG-TO252-3
Цена
265 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD048N06L3GBTMA1.jpg
Other Names
IPD048N06L3 G-ND,IPD048N06L3GBTMA1TR,IPD048N06L3 G,IPD048N06L3GBTMA1DKR,SP000453334,IPD048N06L3GBTMA1CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
115W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Rds On (Max) @ Id, Vgs
4.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
8400 pF @ 30 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IPD048
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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