IPD100N04S402ATMA1 Infineon Technologies
Артикул
IPD100N04S402ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 100A TO252-3, N-Channel 40 V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-313
Цена
344 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD100N04S402ATMA1.jpg
Other Names
IPD100N04S402ATMA1CT,INFINFIPD100N04S402ATMA1,IPD100N04S4-02-ND,SP000646184,2156-IPD100N04S402ATMA1,IPD100N04S402ATMA1DKR,IPD100N04S4-02,IPD100N04S402ATMA1TR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
150W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
9430 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPD100
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3-313
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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