IPD110N12N3GATMA1 Infineon Technologies
Артикул
IPD110N12N3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 120V 75A TO252-3, N-Channel 120 V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3
Цена
427 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD110N12N3GATMA1.jpg
Other Names
SP001127808,IPD110N12N3GATMA1TR,IPD110N12N3GATMA1DKR,IPD110N12N3GATMA1CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
136W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
3V @ 83µA (Typ)
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 60 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPD110
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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