IPD12CN10N Infineon Technologies
Артикул
IPD12CN10N
Бренд
Infineon Technologies
Описание
N-CHANNEL POWER MOSFET, N-Channel 100 V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313
Цена
162 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD12CN10N.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4320 pF @ 50 V
FET Feature
-
Supplier Device Package
PG-TO252-3-313
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
Series
OptiMOS™
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPD12CN10N,INFINFIPD12CN10N
Standard Package
2,500
Power Dissipation (Max)
125W (Tc)
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