IPD50N06S214ATMA2 Infineon Technologies
Артикул
IPD50N06S214ATMA2
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 50A TO252-31, N-Channel 55 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
Цена
142 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD50N06S214ATMA2.jpg
Other Names
SP001063624
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
136W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
14.4mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1485 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPD50N06
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3-11
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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