IPD50R280CEAUMA1 Infineon Technologies
Артикул
IPD50R280CEAUMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 550V 13A TO252, N-Channel 550 V 13A (Ta) 119W (Tc) Surface Mount PG-TO252-3
Цена
338 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD50R280CEAUMA1.jpg
Other Names
IPD50R280CEAUMA1CT,IPD50R280CEAUMA1-ND,IPD50R280CEAUMA1TR,SP001396382,IPD50R280CEAUMA1DKR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
119W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Rds On (Max) @ Id, Vgs
280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs
32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
773 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
13V
Base Product Number
IPD50R280
Mounting Type
Surface Mount
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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