IPD50R500CEAUMA1 Infineon Technologies
Артикул
IPD50R500CEAUMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 550V 7.6A TO252, N-Channel 550 V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3
Цена
172 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD50R500CEAUMA1.jpg
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
550 V
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
18.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
433 pF @ 100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD50R500CEAUMA1CT,IPD50R500CEAUMA1-ND,INFINFIPD50R500CEAUMA1,IPD50R500CEAUMA1TR,IPD50R500CEAUMA1DKR,2156-IPD50R500CEAUMA1,SP001396792
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IPD50R500
Power Dissipation (Max)
57W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут