IPD60R3K3C6 Infineon Technologies
Артикул
IPD60R3K3C6
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 1.7A TO252-3, N-Channel 600 V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3
Цена
146 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD60R3K3C6.jpg
Supplier Device Package
PG-TO252-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
93 pF @ 100 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000799130,IPD60R3K3C6DKR,IPD60R3K3C6BTMA1,IPD60R3K3C6TR,IPD60R3K3C6CT
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
18.1W (Tc)
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