IPD78CN10NGATMA1 Infineon Technologies
Артикул
IPD78CN10NGATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 13A TO252-3, N-Channel 100 V 13A (Tc) 31W (Tc) Surface Mount PG-TO252-3
Цена
171 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD78CN10NGATMA1.jpg
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
716 pF @ 50 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD78CN10NGATMA1-ND,IPD78CN10NGATMA1TR,SP001127814,IPD78CN10NGATMA1CT,2156-IPD78CN10NGATMA1,IPD78CN10NGATMA1DKR,INFINFIPD78CN10NGATMA1
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPD78CN10
Power Dissipation (Max)
31W (Tc)
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