IPD80R600P7ATMA1 Infineon Technologies
Артикул
IPD80R600P7ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 800V 8A TO252-3, N-Channel 800 V 8A (Tc) 60W (Tc) Surface Mount PG-TO252-3
Цена
329 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD80R600P7ATMA1.jpg
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 500 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™ P7
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001644246,IPD80R600P7ATMA1DKR,IPD80R600P7ATMA1TR,IPD80R600P7ATMA1CT
Standard Package
2,500
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IPD80R600
Power Dissipation (Max)
60W (Tc)
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