IPG20N06S2L35AATMA1 Infineon Technologies
Артикул
IPG20N06S2L35AATMA1
Бренд
Infineon Technologies
Описание
MOSFET 2N-CH 55V 2A 8TDSON, Mosfet Array 2 N-Channel (Dual) 55V 20A (Tc) 65W Surface Mount, Wettable Flank PG-TDSON-8-10
Цена
251 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/IPG20N06S2L35AATMA1.jpg
Base Product Number
IPG20N06
Other Names
2156-IPG20N06S2L35AATMA1,INFINFIPG20N06S2L35AATMA1,IPG20N06S2L35AATMA1DKR,SP001023838,IPG20N06S2L35AATMA1CT,IPG20N06S2L35AATMA1TR,IPG20N06S2L35AATMA1-ND
Power - Max
65W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
790pF @ 25V
Mounting Type
Surface Mount, Wettable Flank
Standard Package
5,000
HTSUS
8541.29.0095
Series
Automotive, AEC-Q101, OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
FET Feature
Logic Level Gate
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