IPN50R3K0CEATMA1 Infineon Technologies
Артикул
IPN50R3K0CEATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 500V 2.6A SOT223, N-Channel 500 V 2.6A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
Цена
86 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPN50R3K0CEATMA1.jpg
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
500 V
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id
3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
84 pF @ 100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™ CE
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPN50R3K0CEATMA1DKR,IPN50R3K0CEATMA1CT,IPN50R3K0CEATMA1TR,IPN50R3K0CEATMA1-ND,SP001424878
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IPN50R3
Power Dissipation (Max)
5W (Tc)
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