IPN95R2K0P7ATMA1 Infineon Technologies
Артикул
IPN95R2K0P7ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 950V 4A SOT223, N-Channel 950 V 4A (Tc) 7W (Tc) Surface Mount PG-SOT223
Цена
208 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPN95R2K0P7ATMA1.jpg
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
950 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 400 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™ P7
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPN95R2K0P7ATMA1DKR,SP001821834,IPN95R2K0P7ATMA1TR,IPN95R2K0P7ATMA1CT
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IPN95R2
Power Dissipation (Max)
7W (Tc)
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