IPP050N10NF2SAKMA1 Infineon Technologies
Артикул
IPP050N10NF2SAKMA1
Бренд
Infineon Technologies
Описание
TRENCH >=100V, N-Channel 100 V 19.4A (Ta), 110A (Tc) 3.8W (Ta), 150W (Tc) Through Hole PG-TO220-3
Цена
575 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP050N10NF2SAKMA1.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
19.4A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3.8V @ 84µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 50 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO220-3
Standard Package
50
Series
StrongIRFET™ 2
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP005548848,448-IPP050N10NF2SAKMA1
Power Dissipation (Max)
3.8W (Ta), 150W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут