IPP111N15N3GXKSA1 Infineon Technologies
Артикул
IPP111N15N3GXKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 150V 83A TO220-3, N-Channel 150 V 83A (Tc) 214W (Tc) Through Hole PG-TO220-3
Цена
935 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP111N15N3GXKSA1.jpg
Other Names
IPP111N15N3 G-ND,IPP111N15N3G,SP000677860,IPP111N15N3 G
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
214W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
83A (Tc)
Rds On (Max) @ Id, Vgs
11.1mOhm @ 83A, 10V
Vgs(th) (Max) @ Id
4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3230 pF @ 75 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Base Product Number
IPP111
Mounting Type
Through Hole
Series
OptiMOS™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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