IPP120P04P4L03AKSA1 Infineon Technologies
Артикул
IPP120P04P4L03AKSA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 40V 120A TO220-3, P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1
Цена
556 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP120P04P4L03AKSA1.jpg
Other Names
SP000842300
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
136W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs
234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IPP120
Mounting Type
Through Hole
Series
Automotive, AEC-Q101, OptiMOS™
Package
Tube
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±16V
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