IPP60R190E6XKSA1 Infineon Technologies
Артикул
IPP60R190E6XKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 20.2A TO220-3, N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3
Цена
634 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP60R190E6XKSA1.jpg
Other Names
IPP60R190E6-ND,IPP60R190E6,SP000797378
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
151W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Rds On (Max) @ Id, Vgs
190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPP60R190
Mounting Type
Through Hole
Series
CoolMOS™
Package
Tube
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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