IPP100N06S2L05AKSA2 Infineon Technologies
Артикул
IPP100N06S2L05AKSA2
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 100A TO220-3, N-Channel 55 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Цена
421 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP100N06S2L05AKSA2.jpg
Other Names
INFINFIPP100N06S2L05AKSA2,SP001067950,2156-IPP100N06S2L05AKSA2
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5660 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IPP100
Mounting Type
Through Hole
Series
OptiMOS™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
500
Vgs (Max)
±20V
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