IPP65R660CFDAAKSA1 Infineon Technologies
Артикул
IPP65R660CFDAAKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 6A TO220-3, N-Channel 650 V 6A (Tc) 62.5W (Tc) Through Hole PG-TO220-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP65R660CFDAAKSA1.jpg
Supplier Device Package
PG-TO220-3
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
660mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
543 pF @ 100 V
FET Feature
-
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
Operating Temperature
-40°C ~ 150°C (TJ)
Series
Automotive, AEC-Q101, CoolMOS™
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000875802
Standard Package
500
Mounting Type
Through Hole
Power Dissipation (Max)
62.5W (Tc)
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