IPS70R600P7SAKMA1 Infineon Technologies
Артикул
IPS70R600P7SAKMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 700V 8.5A TO251-3, N-Channel 700 V 8.5A (Tc) 43W (Tc) Through Hole PG-TO251-3
Цена
184 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPS70R600P7SAKMA1.jpg
Other Names
SP001499714
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
43W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Tc)
Rds On (Max) @ Id, Vgs
600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
364 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPS70R600
Mounting Type
Through Hole
Series
CoolMOS™ P7
Package
Tube
Part Status
Active
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
PG-TO251-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Vgs (Max)
±16V
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