IPSA70R360P7SAKMA1 Infineon Technologies
Артикул
IPSA70R360P7SAKMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 700V 12.5A TO251-3, N-Channel 700 V 12.5A (Tc) 59.5W (Tc) Through Hole PG-TO251-3
Цена
222 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPSA70R360P7SAKMA1.jpg
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
PG-TO251-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
700 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
16.4 nC @ 400 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
517 pF @ 400 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™ P7
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPSA70R360P7SAKMA1,IFEINFIPSA70R360P7SAKMA1,SP001664832,IPSA70R360P7S
Standard Package
75
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IPSA70
Power Dissipation (Max)
59.5W (Tc)
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