IPT111N20NFDATMA1 Infineon Technologies
Артикул
IPT111N20NFDATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 96A 8HSOF, N-Channel 200 V 96A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1
Цена
1 579 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPT111N20NFDATMA1.jpg
Other Names
IPT111N20NFDATMA1TR,IPT111N20NFDATMA1DKR,IPT111N20NFDATMA1CT,SP001340384,IPT111N20NFDATMA1-ND
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
375W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
96A (Tc)
Rds On (Max) @ Id, Vgs
11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id
4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7000 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPT111
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
8-PowerSFN
Supplier Device Package
PG-HSOF-8-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,000
Vgs (Max)
±20V
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