IRLR3303PBF Infineon Technologies
Артикул
IRLR3303PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 35A DPAK, N-Channel 30 V 35A (Tc) 68W (Tc) Surface Mount D-Pak
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLR3303PBF.jpg
Supplier Device Package
D-Pak
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
31mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V
FET Feature
-
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001558428
Standard Package
525
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
68W (Tc)
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