IPT60R022S7XTMA1 Infineon Technologies
Артикул
IPT60R022S7XTMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 23A 8HSOF, N-Channel 600 V 23A (Tc) 390W (Tc) Surface Mount PG-HSOF-8-2
Цена
2 825 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPT60R022S7XTMA1.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
22mOhm @ 23A, 12V
Vgs(th) (Max) @ Id
4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 12 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5639 pF @ 300 V
FET Feature
-
Supplier Device Package
PG-HSOF-8-2
Package / Case
8-PowerSFN
Mounting Type
Surface Mount
Series
CoolMOS™S7
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Other Names
SP003330410,448-IPT60R022S7XTMA1DKR,448-IPT60R022S7XTMA1TR,448-IPT60R022S7XTMA1CT
Standard Package
2,000
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Base Product Number
IPT60R022
RoHS Status
ROHS3 Compliant
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
390W (Tc)
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