IPTG014N10NM5ATMA1 Infineon Technologies
Артикул
IPTG014N10NM5ATMA1
Бренд
Infineon Technologies
Описание
TRENCH >=100V PG-HSOG-8, N-Channel 100 V 37A (Ta), 366A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1
Цена
1 622 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
OptiMOS™ 5
Moisture Sensitivity Level (MSL)
1 (Unlimited)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
16000 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C
37A (Ta), 366A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.4mOhm @ 150A, 10V
Vgs(th) (Max) @ Id
3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
211 nC @ 10 V
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 375W (Tc)
Standard Package
1,800
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerSMD, Gull Wing
Supplier Device Package
PG-HSOG-8-1
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPTG014N10NM5ATMA1CT,SP005430771,448-IPTG014N10NM5ATMA1TR,448-IPTG014N10NM5ATMA1DKR
FET Feature
-
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