IPW60R060C7XKSA1 Infineon Technologies
Артикул
IPW60R060C7XKSA1
Бренд
Infineon Technologies
Описание
HIGH POWER_NEW, N-Channel 600 V 35A (Tc) 162W (Tc) Through Hole PG-TO247-3
Цена
827 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPW60R060C7XKSA1.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id
4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2850 pF @ 400 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO247-3
Series
CoolMOS™ C7
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-IPW60R060C7XKSA1-448
Standard Package
1
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Power Dissipation (Max)
162W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут