IQE006NE2LM5ATMA1 Infineon Technologies
Артикул
IQE006NE2LM5ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 25V 41A/298A 8TSON, N-Channel 25 V 41A (Ta), 298A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount, Wettable Flank PG-TSON-8-4
Цена
522 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IQE006NE2LM5ATMA1.jpg
Power Dissipation (Max)
2.1W (Ta), 89W (Tc)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs
650mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
82.1 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5453 pF @ 12 V
FET Feature
-
Supplier Device Package
PG-TSON-8-4
Base Product Number
IQE006
Standard Package
5,000
Series
OptiMOS™5
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Package / Case
8-PowerTDFN
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IQE006NE2LM5ATMA1TR,448-IQE006NE2LM5ATMA1DKR,448-IQE006NE2LM5ATMA1CT,SP002434946
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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