IRF2807S Infineon Technologies
Артикул
IRF2807S
Бренд
Infineon Technologies
Описание
MOSFET N-CH 75V 82A D2PAK, N-Channel 75 V 82A (Tc) 230W (Tc) Surface Mount D2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF2807S.jpg
Supplier Device Package
D2PAK
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
75 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13mOhm @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3820 pF @ 25 V
FET Feature
-
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
82A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001550968,*IRF2807S
Standard Package
50
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
230W (Tc)
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