IRF5801TRPBF Infineon Technologies
Артикул
IRF5801TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 600MA MICRO6, N-Channel 200 V 600mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Цена
107 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF5801TRPBF.jpg
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
Micro6™(TSOP-6)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
88 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF5801TRPBFTR,IRF5801TRPBFDKR,IRF5801TRPBFCT,IRF5801TRPBF-ND,SP001570104
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRF5801
Power Dissipation (Max)
2W (Ta)
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