IRF640NSPBF Infineon Technologies
Артикул
IRF640NSPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 18A D2PAK, N-Channel 200 V 18A (Tc) 150W (Tc) Surface Mount D2PAK
Цена
64 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF640NSPBF.jpg
Supplier Device Package
D2PAK
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
FET Feature
-
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001554094,64-2142PBF-ND,*IRF640NSPBF,2156-IRF640NSPBF-IT,64-2142PBF
Standard Package
1,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
150W (Tc)
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