IRF6641TRPBF Infineon Technologies
Артикул
IRF6641TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 4.6A DIRECTFET, N-Channel 200 V 4.6A (Ta), 26A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
Цена
417 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6641TRPBF.jpg
Package / Case
DirectFET™ Isometric MZ
Supplier Device Package
DIRECTFET™ MZ
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta), 26A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRF6641TRPBF,IRF6641TRPBF-ND,IRF6641TRPBFCT,SP001559700,IRF6641TRPBFDKR,IRF6641TRPBFTR,IFEINFIRF6641TRPBF
Standard Package
4,800
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IRF6641
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
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