IRF6665TRPBF Infineon Technologies
Артикул
IRF6665TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 4.2A DIRECTFET, N-Channel 100 V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH
Цена
231 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6665TRPBF.jpg
Other Names
IRF6665TRPBFDKR,IRF6665TRPBFCT,IRF6665TRPBFTR,2156-IRF6665TRPBF-448,SP001559710
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs
62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRF6665
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
DirectFET™ Isometric SH
Supplier Device Package
DIRECTFET™ SH
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,800
Vgs (Max)
±20V
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