IRF150P221XKMA1 Infineon Technologies
Артикул
IRF150P221XKMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 150V 186A TO247-3, N-Channel 150 V 186A (Tc) 341W (Tc) Through Hole PG-TO247-3
Цена
1 285 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF150P221XKMA1.jpg
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 75 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
StrongIRFET™
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
186A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001621154,IRF150P221
Standard Package
25
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRF150
Power Dissipation (Max)
341W (Tc)
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