IRF6720S2TRPBF Infineon Technologies
Артикул
IRF6720S2TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 11A DIRECTFET, N-Channel 30 V 11A (Ta), 35A (Tc) 1.7W (Ta), 17W (Tc) Surface Mount DirectFET™ Isometric S1
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6720S2TRPBF.jpg
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1140 pF @ 15 V
FET Feature
-
Supplier Device Package
DirectFET™ Isometric S1
Package / Case
DirectFET™ Isometric S1
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 35A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,800
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
1.7W (Ta), 17W (Tc)
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