IRF7322D1 Infineon Technologies
Артикул
IRF7322D1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 20V 5.3A 8SO, P-Channel 20 V 5.3A (Ta) 2W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7322D1.jpg
Supplier Device Package
8-SO
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
62mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
780 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
FETKY™
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
5.3A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRF7322D1
Standard Package
95
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
2W (Ta)
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