IRF7450TRPBF Infineon Technologies
Артикул
IRF7450TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 2.5A 8SO, N-Channel 200 V 2.5A (Ta) 2.5W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7450TRPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Rds On (Max) @ Id, Vgs
170mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
940 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
IRF7450PBFTR,IRF7450PBFDKR,SP001566278,IRF7450PBFCT,*IRF7450TRPBF,IRF7450TRPBF-ND,IRF7450TRPBFTR-ND
Mounting Type
Surface Mount
Standard Package
4,000
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±30V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут