IRF7453TRPBF Infineon Technologies
Артикул
IRF7453TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 250V 2.2A 8SO, N-Channel 250 V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7453TRPBF.jpg
Supplier Device Package
8-SO
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
250 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
230mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 25 V
FET Feature
-
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001555350,IRF7453PBFDKR,IRF7453TRPBF-ND,IRF7453PBFCT,IRF7453PBFTR,*IRF7453TRPBF,IRF7453TRPBFTR-ND
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
2.5W (Ta)
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