IRF7663 Infineon Technologies
Артикул
IRF7663
Бренд
Infineon Technologies
Описание
MOSFET P-CH 20V 8.2A MICRO8, P-Channel 20 V 8.2A (Ta) 1.8W (Ta) Surface Mount Micro8™
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7663.jpg
Power Dissipation (Max)
1.8W (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
8.2A (Ta)
Rds On (Max) @ Id, Vgs
20mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
2520 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Standard Package
80
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package
Micro8™
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±12V
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